Self-Assembled Nanodielectrics (SANDs) for Unconventional Electronics

High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

High-performance GaAs metal-insulator-semiconductor field-effect-transistors MISFETs fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density 10−5 A/cm2 at a gate bias...

Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia se...

Charge conduction and breakdown mechanisms in self-assembled nanodielectrics.

Developing alternative high dielectric constant (k) materials for use as gate dielectrics is essential for continued advances in conventional inorganic CMOS and organic thin film transistors (OTFTs). Thicker films of high-k materials suppress tunneling leakage currents while providing effective capacitances comparable to those of thin films of lower-k materials. Self-assembled monolayers (SAMs)...

Weibull Analysis of Dielectric Breakdown in a Self-Assembled Nanodielectric for Organic Transistors

The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND)metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of g300 C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg=3V)while greatly narrowing the distribution of breakdown voltages....

Self-assembled nanodielectrics and silicon nanomembranes for low voltage, flexible transistors, and logic gates on plastic substrates